(China (Mainland))
Product Summary
The F1207 is a 20W Silicon VDMOS and LDMOS transistor. It is designed specifically for broadband RF applications. The F1207 is suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. The F1207 features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performance.
Parametrics
F1207 absolute maximum ratings: (1)total device dissipation:100W; (2)junction to case thermal resistance:1.75℃/W; (3)maximum junction temperature:200℃; (4)storage temperature:-65℃ to 150℃; (5)DC drain current:4A; (6)drain to gate voltage:50V; (7)drain to source voltage:50V; (8)gate to source voltage:30V.
Features
F1207 features: (1)20Watts Push - Pull; (2)Package Style AQ; (3)high efficiency; (4)linear; (5)high gain; (6)low noise.
Diagrams
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 F1207 |
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