Product Summary

The BSM150GB120DN2 is an IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate).

Parametrics

BSM150GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage: 1200V; (3)Gate-emitter voltage VGE: ± 20V; (4)Power dissipation per IGBT, Ptot: 1250W; (5)Chip temperature Tj: + 150 ℃; (6)Storage temperature Tstg: -55 to +150℃; (7)Thermal resistance, chip case RthJC ≤ 0.1 K/W; (8)Insulation test voltage, t = 1min. Vis 2500 Vac; (9)Creepage distance: 20 mm; (10)Clearance: 11mm.

Features

BSM150GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM150GB120DN2 Circuit Diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM150GB120DN2
BSM150GB120DN2

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0-1: $96.31
1-10: $86.68
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5-10: $98.08
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Data Sheet

0-6: $97.80
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Data Sheet

0-6: $88.80
6-10: $79.80
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Other


Data Sheet

Negotiable